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Anti-Parallel APT2x100DQ60J
Parallel APT2X101DQ60J
ISOTOP (R)
S
OT
22
7
(R)
"UL Recognized"
file # E145592
APT2X101DQ60J APT2x100DQ60J
600V 100A 600V 100A
DUAL DIE ISOTOP(R) PACKAGE
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
PRODUCT APPLICATIONS
* Anti-Parallel Diode
-Switchmode Power Supply -Inverters * Free Wheeling Diode -Motor Controllers -Converters * Snubber Diode
PRODUCT FEATURES
* Ultrafast Recovery Times * Soft Recovery Characteristics * Popular SOT-227 Package * Low Forward Voltage * High Blocking Voltage * Low Leakage Current * Avalanche Energy Rated
PRODUCT BENEFITS
* Low Losses * Low Noise Switching * Cooler Operation * Higher Reliability Systems * Increased System Power
Density
* Uninterruptible Power Supply (UPS) * Induction Heating * High Speed Rectifiers MAXIMUM RATINGS
Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM EAVL TJ,TSTG TL Characteristic / Test Conditions Maximum D.C. Reverse Voltage
All Ratings: TC = 25C unless otherwise specified.
APT2x101_100DQ60J UNIT
Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current (TC = 103C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Avalanche Energy (1A, 40mH) Operating and StorageTemperature Range Lead Temperature for 10 Sec.
600
Volts
100 146 1000 20 -55 to 175 300
mJ C Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions IF = 100A VF Forward Voltage IF = 200A IF = 100A, TJ = 125C IRM CT Maximum Reverse Leakage Current Junction Capacitance, VR = 200V
APT Website - http://www.advancedpower.com
MIN
TYP
MAX
UNIT
1.6 2.05 1.28
2.2
Volts
VR = 600V VR = 600V, TJ = 125C
25 500 190
A pF
053-4208 Rev D
8-2005
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 100A, diF/dt = -1000A/s VR = 400V, TC = 125C IF = 100A, diF/dt = -200A/s VR = 400V, TC = 125C IF = 100A, diF/dt = -200A/s VR = 400V, TC = 25C Test Conditions IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C MIN -
APT2x101_100DQ60J
TYP 34 MAX UNIT ns nC
-
160 290 5 220 1530 13 100 2890 44 -
Amps ns nC Amps ns nC Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions RJC VIsolation WT Junction-to-Case Thermal Resistance RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) Package Weight MIN TYP MAX UNIT C/W Volts
.33 2500 1.03 29.2 10 1.1
oz
g lb*in N*m
Torque
Maximum Mounting Torque
APT Reserves the right to change, without notice, the specifications and information contained herein. 0.35 , THERMAL IMPEDANCE (C/W) 0.30 0.25 0.20 0.5 0.15 0.10 0.05 0 0.3 0.1 0.05 10
-5
D = 0.9
0.7
Note:
PDM
t1 t2
JC
SINGLE PULSE 10
-4 -3
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
Z
10 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL Junction temp (C) 0.0673 0.0182
8-2005
Power (watts)
0.188
0.361
053-4208 Rev D
0.0743 Case temperature (C)
5.17
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
TYPICAL PERFORMANCE CURVES
300 250 IF, FORWARD CURRENT (A) 200 TJ = 175C 150 100 50 TJ = -55C 0 0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage
T =125C J V =400V
R
300
trr, REVERSE RECOVERY TIME (ns)
APT2x101_100DQ60J
T =125C J V =400V
R
TJ = 25C
250 200 150 100 50 0
200A 100A 50A
TJ = 125C
0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Change
4000 IRRM, REVERSE RECOVERY CURRENT (A) Qrr, REVERSE RECOVERY CHARGE (nC) 3500 3000 2500 2000 1500 1000 500 0 50A 100A 200A
60
T =125C J V =400V
50 40 30 20 10 0
R
200A
100A 50A
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 4. Reverse Recovery Charge vs. Current Rate of Change
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Reverse Recovery Current vs. Current Rate of Change 180 160 140
Duty cycle = 0.5 T =175C
J
1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 0.8 0.6 0.4 0.2 0.0 Qrr trr IRRM
Qrr trr
120
IF(AV) (A)
100 80 60 40 20
25 50 75 100 125150 25 50 TJ, JUNCTION TEMPERATURE (C) Figure 6. Dynamic Parameters vs. Junction Temperature
0
125 150 175 Case Temperature (C) Figure 7. Maximum Average Forward Current vs. CaseTemperature
0 75
100
1400 CJ, JUNCTION CAPACITANCE (pF) 1200 1000 800 600 400 200
10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 8-2005 1 053-4208 Rev D
0
APT2x101_100DQ60J
Vr +18V 0V D.U.T. 30H
trr/Qrr Waveform
diF /dt Adjust
APT60M75L2LL
PEARSON 2878 CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 10, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places)
11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)
8-2005
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
Anti-parallel Anode 2
APT2x100DQ60J
APT2X101DQ60J
Parallel
Cathode 1 Cathode 1
Anode 1
053-4208 Rev D
Dimensions in Millimeters and (Inches)
Cathode 2
Anode 1
Cathode 2
Anode 2
ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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